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A Product Line of
Diodes Incorporated
DMN6066SSS
Maximum Ratings @T A = 25°C unless otherwise specified
Drain-Source voltage
Characteristic
Symbol
V DSS
Value
60
Unit
V
Gate-Source voltage
Single Pulsed Avalanche Energy
Single Pulsed Avalanche Current
(Note 2)
(Note 7)
(Note 7)
V GS
E AS
I AS
± 20
37.5
5.0
V
mJ
A
(Note 4)
5.0
Continuous Drain current
V GS = 10V
T A = 70°C (Note 4)
I D
4.0
A
(Note 3)
3.7
Pulsed Drain current
V GS = 10V
(Note 5)
I DM
23
A
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
(Note 4)
(Note 5)
I S
I SM
4.0
23
A
A
Thermal Characteristics @T A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and storage temperature range
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 6)
P D
R θ JA
R θ JL
T J , T STG
1.56
12.5
2.81
22.5
80.0
44.5
37.0
-55 to 150
W
mW/ ° C
° C/W
° C
Notes:
2. AEC-Q101 V GS maximum is ± 16V.
3. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
4. Same as note (3), except the device is measured at t ≤ 10 sec.
5. Same as note (3), except the device is pulsed with D= 0.02 and pulse width 300 μs. The pulse current is limited by the maximum junction temperature.
6. Thermal resistance from junction to solder-point (at the end of the drain lead).
7. UIS in production with L = 3.0mH, I AS = 5.0A, R G = 25 ? , V DD =50V, starting T J = 25°C.
DMN6066SSS
Document Number DS32110 Rev 2 - 2
2 of 9
www.diodes.com
November 2011
? Diodes Incorporated
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